Ultralow voltage operation of biologically assembled all carbon nanotubenanomesh transistors with ion-gel gate dielectrics

Collection with item attached
2017
Item details URL
http://open-repository.kisti.re.kr/cube/handle/open_repository/486668.do
DOI
10.1038/s41598-017-06000-w
Title
Ultralow voltage operation of biologically assembled all carbon nanotubenanomesh transistors with ion-gel gate dielectrics
Description
This work was supported by KIST through the Institutional Program(2E27140) and KIST Young Fellow Program (2V04930). This work was alsosupported by the National Research Council of Science & Technology (NST)grant (No. CAP-16-01-KIST) by the Korea government (MSIP). We would liketo thank Prof. Dae Hwan Kim and Mr. Jae-Young Kim at Kookmin Universityfor the held with the FET measurements and Ms. Min Kyung Cho in theAdvanced Analysis Center at KIST for the TEM analysis.
abstract
The demonstration of field-effect transistors (FETs) based entirely on single-walled carbon nanotubes (SWNTs) would enable the fabrication of high-on-current, flexible, transparent and stretchable devices owing to the excellent electrical, optical, and mechanical properties of SWNTs. Fabricating all-SWNT-based FETs via simple solution process, at room temperature and without using lithography and vacuum process could further broaden the applicability of all-SWNT-FETs. In this work, we report on biologically assembled all SWNT-based transistors and demonstrate that ion-gel-gated network structures of unsorted SWNTs assembled using a biological template material enabled operation of SWNT-based transistors at a very low voltage. The compatibility of the biologically assembled SWNT networks with ion gel dielectrics and the large capacitance of both the three-dimensional channel networks and the ion gel allowed an ultralow operation voltage. The all-SWNT-based FETs showed an I-on/I-off value of >10(2), an on-current density per channel width of 2.16 x 10(-4) A/mm at V-DS = 0.4 V, and a field-effect hole mobility of 1.12 cm(2)/V . s in addition to the low operation voltage of <-0.5 V. We envision that our work suggests a solution-based simple and low-cost approach to realizing all-carbon-based FETs for low voltage operation and flexible applications.
provenance
Made available in Cube on 2018-09-28T16:13:45Z (GMT). No. of bitstreams: 0
language
English
author
Byeon, Hye-Hyeon
Kim, Kein
Kim, Woong
Yi, Hyunjung
accessioned
2018-09-28T16:13:45Z
available
2018-09-28T16:13:45Z
issued
2017
citation
SCIENTIFIC REPORTS(7)
issn
2045-2322
uri
http://open-repository.kisti.re.kr/cube/handle/open_repository/486668.do
Funder
과학기술정보통신부
Funding Program
국가과학기술연구회연구운영비지원
Project ID
1711062855
Jurisdiction
Rep.of Korea
Project Name
Power-efficient high-speed spin memory using spin and quantum phenomena
rights
openAccess
type
article


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