Top-down Fabrication and Enhanced Active Area Electronic Characteristicsof Amorphous Oxide Nanoribbons for Flexible Electronics

Collection with item attached
2017
Item details URL
http://open-repository.kisti.re.kr/cube/handle/open_repository/486334.do
DOI
10.1038/s41598-017-06040-2
Title
Top-down Fabrication and Enhanced Active Area Electronic Characteristicsof Amorphous Oxide Nanoribbons for Flexible Electronics
Description
This research was supported by BioNano Health-Guard Research Centerfunded by the Ministry of Science, ICT & Future Planning (MSIP) of Koreaas Global Frontier Project (Grant number H-GUARD_2013M3A6B2078950) andthe Brain Research Program through the National Research Foundation ofKorea, South Korea (NRF) funded by the Ministry of Science, ICT andFuture Planning (2015M3C7A1029113) and the KRIBB Initiative ResearchProgram (KRIBB, Korea). The TFT fabrication and simulation from Jo andCho at KWU was supported by the Basic Science Research Program throughthe National Research Foundation of Korea (NRF) funded by the Ministryof Education, Science and Technology (No. 2016R1A2B4008754). Theparticipation of Katz, and of Jang at JHU, was supported by the NationalInstitute of Biomedical Imaging and Bioengineering of the NationalInstitutes of Health under award number R21EB018426. The content issolely the responsibility of the authors and does not necessarilyrepresent the official views of the National Institutes of Health. Theauthors appreciate Mr. Suchang Mun's graphical artworks.
abstract
Inorganic amorphous oxide semiconductor (AOS) materials such as amorphous InGaZnO (a-IGZO) possess mechanical flexibility and outstanding electrical properties, and have generated great interest for use in flexible and transparent electronic devices. In the past, however, AOS devices required higher activation energies, and hence higher processing temperatures, than organic ones to neutralize defects. It is well known that one-dimensional nanowires tend to have better carrier mobility and mechanical strength along with fewer defects than the corresponding two-dimensional films, but until now it has been difficult, costly, and impractical to fabricate such nanowires in proper alignments by either "bottom-up" growth techniques or by "top-down" e-beam lithography. Here we show a top-down, cost-effective, and scalable approach for the fabrication of parallel, laterally oriented AOS nanoribbons based on lift-off and nano-imprinting. High mobility (132 cm(2)/Vs), electrical stability, and transparency are obtained in a-IGZO nanoribbons, compared to the planar films of the same a-IGZO semiconductor.
provenance
Made available in Cube on 2018-09-28T16:04:49Z (GMT). No. of bitstreams: 0
language
English
author
Jang, Hyun-June
Lee, Ki Joong
Jo, Kwang-Won
Katz, Howard E.
Cho, Won-Ju
Shin, Yong-Beom
accessioned
2018-09-28T16:04:49Z
available
2018-09-28T16:04:49Z
issued
2017
citation
SCIENTIFIC REPORTS(7)
issn
2045-2322
uri
http://open-repository.kisti.re.kr/cube/handle/open_repository/486334.do
Funder
과학기술정보통신부
Funding Program
뇌과학원천기술개발
Project ID
1711055746
Jurisdiction
Rep.of Korea
Project Name
Discovery of protein biomarker and development of diagnostic technique for early treatment of brain developmental delay
rights
openAccess
type
article


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