The self-activated radical doping effects on the catalyzed surface ofamorphous metal oxide films

Collection with item attached
2017
Item details URL
http://open-repository.kisti.re.kr/cube/handle/open_repository/486120.do
DOI
10.1038/s41598-017-12818-1
Title
The self-activated radical doping effects on the catalyzed surface ofamorphous metal oxide films
Description
This work was supported by the National Research Foundation ofKorea(NRF) grant funded by the Korea government(MSIT) (No.2017R1A2B3008719)
abstract
In this study, we propose a self-activated radical doping (SRD)method on the catalyzed surface of amorphous oxide film that can improve both the electrical characteristics and the stability of amorphous oxide films through oxidizing oxygen vacancy using hydroxyl radical which is a strong oxidizer. This SRD method, which uses UV irradiation and thermal hydrogen peroxide solution treatment, effectively decreased the amount of oxygen vacancies and facilitated self-passivation and doping effect by radical reaction with photo-activated oxygen defects. As a result, the SRD-treated amorphous indium-gallium-zinc oxide (a-IGZO) thin film transistors (TFTs) showed superior electrical performances compared with non-treated a-IGZO TFTs. The mobility increased from 9.1 to 17.5 cm(2)/Vs, on-off ratio increased from 8.9 x 10(7) to 7.96 x 10(9), and the threshold voltage shift of negative bias-illumination stress for 3600 secs under 5700 lux of white LED and negative bias-temperature stress at 50 degrees C decreased from 9.6 V to 4.6 V and from 2.4 V to 0.4 V, respectively.
provenance
Made available in Cube on 2018-09-28T15:59:03Z (GMT). No. of bitstreams: 0
language
English
author
Kim, Hong Jae
Tak, Young Jun
Park, Sung Pyo
Na, Jae Won
Kim, Yeong-gyu
Hong, Seonghwan
Kim, Pyeong Hun
Kim, Geon Tae
Kim, Byeong Koo
Kim, Hyun Jae
orcid
Kim, Hyun Jae/0000-0002-6879-9256
accessioned
2018-09-28T15:59:03Z
available
2018-09-28T15:59:03Z
issued
2017
citation
SCIENTIFIC REPORTS(7)
issn
2045-2322
uri
http://open-repository.kisti.re.kr/cube/handle/open_repository/486120.do
Funder
교육부
Funding Program
BK21플러스사업(0.5)
Project ID
1345274009
Jurisdiction
Rep.of Korea
Project Name
Institute of BioMed-IT, Energy-IT and Smart-IT Technology (BEST)
rights
openAccess
type
article


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