Precision depth measurement of through silicon vias (TSVs) on 3Dsemiconductor packaging process

Collection with item attached
2012
Item details URL
http://open-repository.kisti.re.kr/cube/handle/open_repository/483429.do
DOI
10.1364/OE.20.005011
Title
Precision depth measurement of through silicon vias (TSVs) on 3Dsemiconductor packaging process
Description
This work was supported in part by the National Program: Development ofApplication Technologies of Physical Measurement Standards (2012),KRISS.
abstract
We have proposed and demonstrated a novel method to measure depths of through silicon vias (TSVs) at high speed. TSVs are fine and deep holes fabricated in silicon wafers for 3D semiconductors; they are used for electrical connections between vertically stacked wafers. Because the high-aspect ratio hole of the TSV makes it difficult for light to reach the bottom surface, conventional optical methods using visible lights cannot determine the depth value. By adopting an optical comb of a femtosecond pulse laser in the infra-red range as a light source, the depths of TSVs having aspect ratio of about 7 were measured. This measurement was done at high speed based on spectral resolved interferometry. The proposed method is expected to be an alternative method for depth inspection of TSVs. (C) 2012 Optical Society of America
provenance
Made available in Cube on 2018-09-28T14:46:38Z (GMT). No. of bitstreams: 0
language
English
author
Jin, Jonghan
Kim, Jae Wan
Kang, Chu-Shik
Kim, Jong-Ahn
Lee, Sunghun
orcid
Jin, Jonghan/0000-0002-3511-4636
accessioned
2018-09-28T14:46:38Z
available
2018-09-28T14:46:38Z
issued
2012
citation
OPTICS EXPRESS(20): 5
issn
1094-4087
uri
http://open-repository.kisti.re.kr/cube/handle/open_repository/483429.do
Funder
교육과학기술부
Funding Program
한국표준과학연구원연구운영비지원
Project ID
1345196018
Jurisdiction
Rep.of Korea
Project Name
신수요 대응 측정기술 개발
rights
openAccess
type
article


Files in This Item

There are no attached files.