Performance Enhancement of Capacitive-Coupling Dual-gate Ion-SensitiveField-Effect Transistor in Ultra-Thin-Body

Collection with item attached
2014
Item details URL
http://open-repository.kisti.re.kr/cube/handle/open_repository/483039.do
DOI
10.1038/srep05284
Title
Performance Enhancement of Capacitive-Coupling Dual-gate Ion-SensitiveField-Effect Transistor in Ultra-Thin-Body
Description
This research was supported by Basic Science Research Program throughthe National Research Foundation of Korea (NRF) funded by the Ministryof Education, Science and Technology (No. 2013R1A1A2A10011202). Thisresearch was supported by Basic Science Research Program through theNational Research Foundation of Korea (NRF) funded by the Ministry ofEducation, Science and Technology (No. 2013R1A1A2A10011202). We greatlyappreciate Mr. Su-Chang Mun who provided assistance of graphic design.
abstract
Recently, thin-film transistor based-ISFETs with the dual-gate (DG) structures have been proposed, in order to beat the Nernst response of the standard ISFET, utilizing diverse organic or inorganic materials. The immutable Nernst response can be dramatically transformed to an ultra-sensing margin, with the capacitive-coupling arisen from the DG structure. In order to advance this platform, we here embedded the ultra-thin body (UTB) into the DG ISFET. The UTB of 4.3 nm serves to not only increase its sensitivity, but also to strongly suppress the leakage components, leading to a better stability of the DG ISFET. In addition, we first provide a comprehensive analysis of the body thickness effects especially how the thick body can render the degradation in the device performance, such as sensitivity and stability. The UTB DG ISFET will allow the ISFET-based biosensor platform to continue enhancement into the next decade.
provenance
Made available in Cube on 2018-09-28T14:36:13Z (GMT). No. of bitstreams: 0
language
English
author
Jang, Hyun-June
Cho, Won-Ju
accessioned
2018-09-28T14:36:13Z
available
2018-09-28T14:36:13Z
issued
2014
citation
SCIENTIFIC REPORTS(4)
issn
2045-2322
uri
http://open-repository.kisti.re.kr/cube/handle/open_repository/483039.do
Funder
교육부
Funding Program
일반연구자지원
Project ID
1345217774
Jurisdiction
Rep.of Korea
Project Name
Development of multi-functional transparent embedded memory devices using capacitive coupling by resistive switching of oxide semiconductor
rights
openAccess
type
article


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