High performance of InGaN light-emitting diodes by air-gap/GaNdistributed Bragg reflectors

Collection with item attached
2012
Item details URL
http://open-repository.kisti.re.kr/cube/handle/open_repository/479868.do
DOI
10.1364/OE.20.009999
Title
High performance of InGaN light-emitting diodes by air-gap/GaNdistributed Bragg reflectors
Description
This work was supported by the Strategic Technology Development Projectof the Ministry of Knowledge Economy and a Priority Research CenterProgram through the National Research Foundation of Korea, funded by theMinistry of Education, Science and Technology of the Korean government(2011-0027956).
abstract
The effect of air-gap/GaN DBR structure, fabricated by selective lateral wet-etching, on InGaN light-emitting diodes (LEDs) is investigated. The air-gap/GaN DBR structures in LED acts as a light reflector, and thereby improve the light output power due to the redirection of light into escape cones on both front and back sides of the LED. At an injection current of 20 mA, the enhancement in the radiometric power as high as 1.91 times as compared to a conventional LED having no DBR structure and a far-field angle as low as 128.2 degrees are realized with air-gap/GaN DBR structures. (C) 2012 Optical Society of America
provenance
Made available in Cube on 2018-09-28T13:10:53Z (GMT). No. of bitstreams: 0
language
English
author
Ryu, Jae Hyoung
Kim, Hee Yun
Kim, Hyun Kyu
Katharria, Yashpal Singh
Han, Nam
Kang, Ji Hye
Park, Young Jae
Han, Min
Ryu, Beo Deul
Ko, Kang Bok
Suh, Eun-Kyoung
Hong, Chang-Hee
orcid
KATHARRIA, Yashpal/0000-0003-3591-1798;
accessioned
2018-09-28T13:10:53Z
available
2018-09-28T13:10:53Z
issued
2012
citation
OPTICS EXPRESS(20): 9
issn
1094-4087
uri
http://open-repository.kisti.re.kr/cube/handle/open_repository/479868.do
Funder
교육과학기술부
Funding Program
2단계연구중심대학육성(0.5)
Project ID
1345196842
Jurisdiction
Rep.of Korea
Project Name
Center for Euture Energy Materials and Devices
rights
openAccess
type
article


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