Excellent low-field magnetoresistance effect in Ga-doped MnZn ferrites

Collection with item attached
2014
Item details URL
http://open-repository.kisti.re.kr/cube/handle/open_repository/478668.do
DOI
10.1063/1.4905446
Title
Excellent low-field magnetoresistance effect in Ga-doped MnZn ferrites
abstract
An excellent low field magnetoresistance (LFMR) property was achieved from the Ga-doped (Mn0.8Zn0.2) Fe2O4 (MnZn) ferrites at room temperature (RT). For this study, undoped and Ga-doped MnZn ferrites with the nominal compositions of (Mn0.8Zn0.2)(1-x)GaxFe2O4 (x = 0 similar to 0.1) were prepared by the conventional solid state reaction at 1400 degrees C for 2 h in air. From the magneto-transport measurements, Ga-doped MnZn ferrites were found to have not only much lower resistivity values but also greatly improved LFMR ratios in comparison with undoped sample. The highest maximum LFMR ratio of 2.5% at 290 K in 0.5 kOe was achievable from 2 mol% Ga-doped MnZn ferrite. This large LFMR effect is attributable to an increase in spin electrons by Ga3+ ion substitution for the (Mn, Zn) (2+) site. (C) 2014 Author(s). All article content, except where otherwise noted, is licensed under a Creative Commons Attribution 3.0 Unported License.
provenance
Made available in Cube on 2018-09-28T12:39:13Z (GMT). No. of bitstreams: 0
language
English
author
Kim, Hyo-Jin
Yoo, Sang-Im
accessioned
2018-09-28T12:39:13Z
available
2018-09-28T12:39:13Z
issued
2014
citation
AIP ADVANCES(4): 12
issn
2158-3226
uri
http://open-repository.kisti.re.kr/cube/handle/open_repository/478668.do
Funder
교육부
Funding Program
BK21플러스사업(0.5)
Project ID
1345228947
Jurisdiction
Rep.of Korea
Project Name
SNU Materials Division for Educating Creative Global Leaders
rights
openAccess
type
article


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