Advanced Silicon-on-Insulator: Crystalline Silicon on Atomic LayerDeposited Beryllium Oxide

Collection with item attached
2017
Item details URL
http://open-repository.kisti.re.kr/cube/handle/open_repository/474345.do
DOI
10.1038/s41598-017-13693-6
Title
Advanced Silicon-on-Insulator: Crystalline Silicon on Atomic LayerDeposited Beryllium Oxide
Description
This research was supported by the Ministry of Science and ICT (MSIT),Korea, under the "ICT Consilience Creative Program"(IITP-2017-2017-0-01015) supervised by the IITP(Institute forInformation & communications Technology Promotion). This work wassupported by the Future Semiconductor Device Technology DevelopmentProgram (10044735, 10048536) funded by MOTIE (Ministry of Trade,Industry & Energy) and KSRC (Korea Semiconductor Research Consortium).We are indebted to Gong Gu and Lifen Wang for insightful discussions andsuggestions. We would also like to thank Sun-Phil Han of the UCRF forhis help with beryllium NMR spectroscopy. JHY, ESL, and CWB are gratefulto the Institute for Basic Science (IBS-R019-D1) as well as the BK21Plus Program funded by the Ministry of Education and the NationalResearch Foundation of Korea for their support.
abstract
Silicon-on-insulator (SOI) technology improves the performance of devices by reducing parasitic capacitance. Devices based on SOI or silicon-on-sapphire technology are primarily used in high-performance radio frequency (RF) and radiation sensitive applications as well as for reducing the short channel effects in microelectronic devices. Despite their advantages, the high substrate cost and overheating problems associated with complexities in substrate fabrication as well as the low thermal conductivity of silicon oxide prevent broad applications of this technology. To overcome these challenges, we describe a new approach of using beryllium oxide (BeO). The use of atomic layer deposition (ALD) for producing this material results in lowering the SOI wafer production cost. Furthermore, the use of BeO exhibiting a high thermal conductivity might minimize the self-heating issues. We show that crystalline Si can be grown on ALD BeO and the resultant devices exhibit potential for use in advanced SOI technology applications.
provenance
Made available in Cube on 2018-09-28T10:43:35Z (GMT). No. of bitstreams: 0
language
English
author
Lee, Seung Min
Yum, Jung Hwan
Larsen, Eric S.
Lee, Woo Chul
Kim, Seong Keun
Bielawski, Christopher W.
Oh, Jungwoo
orcid
Kim, Seong Keun/0000-0001-8712-7167
accessioned
2018-09-28T10:43:35Z
available
2018-09-28T10:43:35Z
issued
2017
citation
SCIENTIFIC REPORTS(7)
issn
2045-2322
uri
http://open-repository.kisti.re.kr/cube/handle/open_repository/474345.do
Funder
과학기술정보통신부
Funding Program
전자정보디바이스산업원천기술개발
Project ID
1711058703
Jurisdiction
Rep.of Korea
Project Name
Development of device resistance reduction technology for the next generation semiconductor device beyond 20nm node
rights
openAccess
type
article


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