A SONOS device with a separated charge trapping layer for improvement ofcharge injection

Collection with item attached
2017
Item details URL
http://open-repository.kisti.re.kr/cube/handle/open_repository/474028.do
DOI
10.1063/1.4978322
Title
A SONOS device with a separated charge trapping layer for improvement ofcharge injection
Description
This work was sponsored in part by the Center for Integrated SmartSensors funded by the Ministry of Education, Science and Technology asGlobal Frontier Project under Grant CISS-20110031848, by the IT R&Dprogram of MKE/KEIT under Grant 10035320 (Development of novel 3Dstacked devices and core materials for the next generation flashmemory), by the Samsung Electronics Company Ltd., and by the SK HynixSemiconductor Inc. The present research has been partially conducted bythe Research Grant of Kwangwoon University in 2016.
abstract
A charge trapping layer that is separated from the primary gate dielectric is implemented on a FinFET SONOS structure. By virtue of the reduced effective oxide thickness of the primary gate dielectric, a strong gate-to-channel coupling is obtained and thus short-channel effects in the proposed device are effectively suppressed. Moreover, a high program/erase speed and a large shift in the threshold voltage are achieved due to the improved charge injection by the reduced effective oxide thickness. The proposed structure has potential for use in high speed flash memory. (C) 2017 Author(s).
provenance
Made available in Cube on 2018-09-28T10:35:18Z (GMT). No. of bitstreams: 0
language
English
author
Ahn, Jae-Hyuk
Moon, Dong-Il
Ko, Seung-Won
Kim, Chang-Hoon
Kim, Jee-Yeon
Kim, Moon-Seok
Seol, Myeong-Lok
Moon, Joon-Bae
Choi, Ji-Min
Oh, Jae-Sub
Choi, Sung-Jin
Choi, Yang-Kyu
orcid
Seol, Myeong-Lok/0000-0001-5724-2244
accessioned
2018-09-28T10:35:18Z
available
2018-09-28T10:35:18Z
issued
2017
citation
AIP ADVANCES(7): 3
issn
2158-3226
uri
http://open-repository.kisti.re.kr/cube/handle/open_repository/474028.do
Funder
교육부
Funding Program
BK21플러스사업(0.5)
Project ID
1345274007
Jurisdiction
Rep.of Korea
Project Name
Global Leader Education Program for Future Electronics and Communications
rights
openAccess
type
article


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